Electronic transport in tin(IV) oxide nanocrystalline films: Two-medium transport with three-dimensional variable-range hopping mechanism for the ultrasmall nanocrystallite size regime

Journal of Physical Chemistry C

Volumn 116, Issue 8, 2012, Pages 4979-4985

  Bazargan, Samad ^a   Heinig, Nina F ^a   Rios, Jose Fernando ^a   Leung, K T ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATRICES; CRYSTALLINE GRAINS; CRYSTALLINITIES; ELECTRONIC TRANSPORT; ENERGY BARRIER HEIGHT; EXPERIMENTAL DATA; EXPONENTIAL GROWTH; NANOCRYSTALLINE FILMS; NANOCRYSTALLINES; NANOCRYSTALLITE SIZE; OPTICAL TRANSPARENCY; POST ANNEALING; POST-ANNEALING TEMPERATURE; RESISTIVITY BEHAVIOR; RESISTIVITY DATA; SIMPLE METHOD; SIZE RANGES; TRANSPORT CHANNEL; ULTRA-SMALL; VARIABLE-RANGE HOPPING; VISIBLE REGION;

AMORPHOUS FILMS; CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; DEFECT DENSITY; GRAIN BOUNDARIES; NANOCRYSTALLITES; OXIDE FILMS; TIN;

THREE DIMENSIONAL;

EID: 84857735037     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp209864e     Document Type: Article

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