Scattering mechanism of transparent conducting tin oxide films prepared by magnetron sputtering

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 2475-2480

  Kim, I H ^a   Ko, J H ^b   Kim, D ^b   Lee, K S ^a   Lee, T S ^a   Jeong, J h ^a   Cheong, B ^a   Baik, Y J ^a   Kim, W M ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

Hall mobility; Scattering mechanisms; Sputtering; Tin oxide; Transparent conducting oxide

Indexed keywords

BAND STRUCTURE; GRAIN BOUNDARIES; HALL EFFECT; MAGNETRON SPUTTERING; THIN FILMS; TIN COMPOUNDS;

HALL MOBILITY; SCATTERING MECHANISMS; TIN OXIDES; TRANSPARENT CONDUCTING OXIDES;

CONDUCTIVE FILMS;

EID: 33750817358     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.020     Document Type: Article

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