Drude's model calculation rule on electrical transport in Sb-doped SnO2 thin films, deposited via sol-gel

Journal of Physics and Chemistry of Solids

Volumn 67, Issue 7, 2006, Pages 1410-1415

  Geraldo, Viviany ^a,b   Scalvi, Luis V A ^a   Lisboa Filho, P N ^a   Morilla Santos, C ^a  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

A. Oxides; A. Semiconductors; B. Sol gel growth; D. Transport properties

Indexed keywords

APPROXIMATION THEORY; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NANOSTRUCTURED MATERIALS; OXIDES; PATTERN RECOGNITION; PHOTOEMISSION; RESONANCE; SCATTERING; SEMICONDUCTOR MATERIALS; SOL-GELS; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

DRUDE'S THEORY; FREE CARRIER CONCENTRATION; SOL-GEL DIP-COATING; SOL-GEL GROWTH;

THIN FILMS;

EID: 33745912530     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2006.01.102     Document Type: Article

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