Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

Applied Physics Letters

Volumn 94, Issue 22, 2009, Pages

  Bharadwaja, S S N ^a   Venkatasubramanian, C ^a   Fieldhouse, N ^a   Ashok, S ^a   Horn, M W ^a   Jackson, T N ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER HOPPING; CHARGE HOPPING; CHARGE TRANSPORT; EFROS AND SHKLOVSKII; ELECTRICAL PROPERTY; FILM PROPERTIES; LOW TEMPERATURES; LOW-TEMPERATURE REGIME; PROCESSING CONDITION; PULSED DC SPUTTERING; TEMPERATURE-DEPENDENT RESISTIVITY; VANADIUM OXIDE THIN FILMS; VANADIUM OXIDES; VARIABLE RANGE HOPPING;

ELECTRIC PROPERTIES; OXIDES; THIN FILMS; VANADIUM; VANADIUM ALLOYS; VANADIUM COMPOUNDS;

OXIDE FILMS;

EID: 66749086269     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3139864     Document Type: Article

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