Pressure and electric field-induced metallization in the phase-engineered ZrX2 (X = S, Se, Te) bilayers

Physical Chemistry Chemical Physics

Volumn 17, Issue 29, 2015, Pages 19215-19221

  Kumar, Ashok ^a   He, Haiying ^b   Pandey, Ravindra ^c   Ahluwalia, P K ^d   Tankeshwar, K ^a  

^a PANJAB UNIVERSITY   (India)

^b VALPARAISO UNIVERSITY   (United States)

^c MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

^d HIMACHAL PRADESH UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84937138714     PISSN: 14639076     EISSN: None     Source Type: Journal    
DOI: 10.1039/c5cp01445j     Document Type: Article

References (43)

1. P. Miro M. Audiffred T. Heine An atlas of two-dimensional materials Chem. Soc. Rev. 2014 43 6537
2. M. Xu T. Liang M. Shi H. Chen Graphene-like two-dimensional materials Chem. Rev. 2013 113 3766
3. X. Song J. Hu H. Zeng Two-dimensional semiconductors: recent progress and future perspectives J. Mater. Chem. C 2013 1 2952
4. K. J. Koski Y. Cui The new skinny in two-dimensional nanomaterials ACS Nano 2013 7 3739
5. V. Sorkin H. Pan H. Shi S. Y. Quek Y. W. Zhang Nanoscale transition metal dichalcogenides: structures, properties and applications Crit. Rev. Solid State Mater. Sci. 2014 39 319
6. A. Kuc Low-dimensional transition metal dichalcogenides Chem. Modell. 2014 11 1
7. M. Chhowalla H. Shin G. Eda L. Li K. Loh H. Zhang The chemistry of two-dimensional layered transition metal dichalcogenidenanosheets Nat. Chem. 2013 5 263
8. 2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors Eur. Phys. J. B 2012 85 186
9. 2:a new direc-gap semiconductor Phys. Rev. Lett. 2010 105 136805
10. 2 Nat. Nanotechnol. 2013 9 111
11. 2 Nano Lett. 2014 14 6231
12. 2 (M = Mo, W; X = S, Se, Te): effect of quantum confinement Phys. B 2012 407 4627
13. 2 (X = S, Se, Te) J. Alloys Compd. 2013 550 283
14. A. Kumar P. K. Ahluwalia Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides J. Alloys Compd. 2014 587 459
15. H. Guo N. Lu L. Wang X. Wu X. C. Zeng Tuning electronic and magnetic properties of early transition-metal dichalcogenides via tensile strain J. Phys. Chem. C 2014 118 7242
16. A. Ramasubramaniam Tunable band gaps of transition metal dichalcogenides Phys. Rev. B: Condens. Matter Mater. Phys. 2011 84 205325
17. D. Voiry A. Goswami R. Kappera C. Silva D. Kaplan T. Fujita M. Chen T. Asefa M. Chhowalla Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering Nat. Chem. 2015 7 45
18. 2 (X = S, Se, Te) Phys. B 2013 419 66
19. 2 monolayers under strain Phys. Rev. B: Condens. Matter Mater. Phys. 2013 88 195420
20. 2 (M = Mo, W; X = S, Se, Te) Modell. Simul. Mater. Sci. Eng. 2013 21 065015
21. 2 Nano Lett. 2013 13 2931
22. 2 by vertical electric field: a first principles investigations J. Phys. Chem. C 2012 116 21556
23. 2 transistor Nat. Mater. 2014 13 1128
24. K. N. Duerloo Y. Li E. J. Reed Structural phase transition in two dimensional Mo- an d W dichalcogenides monolayers Nat. Commun. 2014 5 4214
25. 2 (X = S, Se, Te) from first principles calculations J. Chem. Phys. 2011 134 204705
26. 2 monolayer by strain: first principles calculations RSC Adv. 2014 4 7396
27. G. Kresse J. Furthmuller Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Phys. Rev. B: Condens. Matter Mater. Phys. 1996 54 11169
28. J. Neugebauer M. Scheffler Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al (111) Phys. Rev. B: Condens. Matter Mater. Phys. 1992 46 16067
29. S. Grimme SemiempiricalGGA-type density functional constructed with a long-range dispersion correction J. Comput. Chem. 2006 27 1787
30. S. L. Dudarev G. A. Botton S. Y. Savrasov C. J. Humphreys A. P. Sutton Electron energy-loss spectra and structural stability of nickel oxide: a LSDA+U study Phys. Rev. B: Condens. Matter Mater. Phys. 1998 57 1505
31. Z. F. Igor V. Solovyev H. Sawada First principles study on electronic structures and phase stability of MnO and FeO under high pressure Phys. Rev. B: Condens. Matter Mater. Phys. 1999 59 762
32. H. J. Kulik N. Marzari Transition-metal dioxides: A case for the intersite term in Hubbard-model functionals J. Chem. Phys. 2011 134 094103
33. J. Wilson A. D. Yoffe The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties Adv. Phys. 1969 18 193
34. S. Bhattacharyya A. K. Singh Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides Phys. Rev. B: Condens. Matter Mater. Phys. 2012 86 075454
35. 2 structure J. Phys. Chem. Solids 1965 26 1445
36. W. G. Wyckoff, Crystal structures, 2nd edn, 1965, vol. 1, p. 269
37. P. A. Lee G. Said R. Davis T. H. Lim On the optical properties of some layer compounds J. Phys. Chem. Solids 1969 30 2719
38. A. P. Nayak S. Bhattacharyya J. Zhu J. Liu X. Wu T. Pandey C. Jin A. K. Singh D. Akinwande J.-F. Lin Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide Nat. Commun. 2014 5 3731
39. Z. Chi X. Zhao H. Zhang A. Goncharov S. Lobanov T. Kagayama M. Sakata X. Chen Pressure-induced metallization of molybdenum disulphide Phys. Rev. Lett. 2014 113 036802
40. F. Zheng Z. Liu J. Wu W. Duan B. Gu Scaling law of gian Stark effect in boron nitride nanoribbons and nanotubes Phys. Rev. B: Condens. Matter Mater. Phys. 2008 78 085423
41. K. Khoo M. Mazzoni S. Louie Tuning the electronic properties of boron nitride nanotubes with transverse electric fields: A giant dc Stark effect Phys. Rev. B: Condens. Matter Mater. Phys. 2004 69 201401
42. M. Ishigami J. Sau S. Aloni M. Cohen A. Zettl Observation of giant Stark effect in Boron Nitride nanotubes Phys. Rev. Lett. 2005 94 056804
43. S. Das A. Prakash R. Salazar J. Appenzeller Toward Low Power Electronics: Tunnelling Phenomenon in Transition Metal Dichalcogenides ACS Nano 2014 8 1681