Effect of quantum confinement on electronic and dielectric properties of niobium dichalcogenides NbX2 (X = S, Se, Te)

Journal of Alloys and Compounds

Volumn 550, Issue , 2013, Pages 283-291

  Kumar, Ashok ^a   Ahluwalia, P K ^a  

^a HIMACHAL PRADESH UNIVERSITY   (India)

Author keywords

Dielectric response; Electron energy loss spectra; Electronic band structure; Transition metal compounds

Indexed keywords

BASIS SETS; DICHALCOGENIDES; DIELECTRIC RESPONSE; ELECTRON ENERGY LOSS SPECTRUM; ELECTRONIC BAND STRUCTURE; IN-PLANE POLARIZATION; INTER-BAND TRANSITION; INTERLAYER INTERACTIONS; NUMBER OF LAYERS; OUT-OF-PLANE; PSEUDO-ATOMIC ORBITALS; PSEUDOPOTENTIALS; QUANTUM CONFINEMENT EFFECTS; RED SHIFT; SLAB THICKNESS;

BAND STRUCTURE; DOPPLER EFFECT; ELECTRON ENERGY LOSS SPECTROSCOPY; MONOLAYERS; NIOBIUM; PLASMONS; POLARIZATION; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM WELLS; TRANSITION METAL COMPOUNDS;

DIELECTRIC PROPERTIES;

EID: 84869877531     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.09.068     Document Type: Article

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