Two different device physics principles for operating MoS2 transistor biosensors with femtomolar-level detection limits

Applied Physics Letters

Volumn 107, Issue 1, 2015, Pages

  Nam, Hongsuk ^a   Oh, Bo Ram ^a   Chen, Pengyu ^a   Yoon, Jeong Seop ^a   Wi, Sungjin ^a   Chen, Mikai ^a   Kurabayashi, Katsuo ^a   Liang, Xiaogan ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIGENS; BIOSENSORS; MOLYBDENUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSISTORS;

ANTIBODY-ANTIGEN; BINDING EVENTS; CONVENTIONAL CAPACITORS; FUNCTIONALIZATIONS; FUNCTIONALIZED; INSULATING LAYERS; LEVEL DETECTIONS; TRANSISTOR CHANNELS;

ANTIBODIES;

EID: 84937010405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4926800     Document Type: Article

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