Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation

Nano Letters

Volumn 15, Issue 6, 2015, Pages 3820-3826

  Park, Sang Han ^a   Chae, Jimin ^a   Jeong, Kwang Sik ^a   Kim, Tae Hyeon ^a   Choi, Hyejin ^a   Cho, Mann Ho ^a   Hwang, Inwoong ^b,d   Bae, Myung Ho ^c,d   Kang, Chul ^e  

^a Yonsei University   (South Korea)

^b Chungnam National University   (South Korea)

^c University of Science and Technology (UST)   (South Korea)

^d Korea Research Institute of Standards and Science   (South Korea)

^e Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

DFT; PPMS; Sb2Te3; strain; THz; Topological insulator

Indexed keywords

DEFORMATION; DENSITY FUNCTIONAL THEORY; ELECTRIC INSULATORS; STRAIN; SURFACE STATES; TERAHERTZ SPECTROSCOPY; TIME DOMAIN ANALYSIS; TOPOLOGY; X RAY SCATTERING;

DFT; PPMS; STRUCTURAL DEFORMATION; TEMPERATURE-DEPENDENT RESISTANCE; TERAHERTZ TIME DOMAIN SPECTROSCOPY; THZ; TOPOLOGICAL INSULATORS; X-RAY SCATTERING MEASUREMENTS;

TENSILE STRAIN;

TELLURIUM;

TENSILE STRENGTH;

TELLURIUM; TENSILE STRENGTH;

EID: 84935889340     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b00553     Document Type: Article

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