Room temperature MBE deposition of Bi 2Te 3 and Sb 2Te 3 thin films with low charge carrier densities

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 2, 2012, Pages 289-293

  Peranio, N ^a   Winkler, M ^b   Aabdin, Z ^a   Konig J ^b   Bottner H ^b   Eibl, O ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b FRAUNHOFER INSTITUTE FOR PHYSICAL MEASUREMENT TECHNIQUES IPM   (Germany)

Author keywords

EDX; MBE; point defects; TEM; thermoelectric effects; thin films

Indexed keywords

ANTI-SITE DEFECT; IN-PLANE; LOW TEMPERATURES; MBE DEPOSITION; POLYCRYSTALLINE; ROOM TEMPERATURE; SMALL CHARGES;

CARRIER CONCENTRATION; DEFECT DENSITY; DEFECTS; ENERGY DISPERSIVE SPECTROSCOPY; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SILICON COMPOUNDS; THERMOELECTRICITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

VAPOR DEPOSITION;

EID: 84856255725     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127440     Document Type: Article

References (19)

1. L. D. Hicks, and, M. S. Dresselhaus, Phys. Rev. B 47, 12727 (1993).
2. J. E. Cornett, and, O. Rabin, Appl. Phys. Lett. 98, 182104 (2011).
3. R. Venkatasubramanian, E. Siivola, T. Colpitts, and, B. O'Quinn, Nature (London) 413, 597 (2001).
4. N. Peranio, O. Eibl, and, J. Nurnus, J. Appl. Phys. 100, 114306 (2006).
5. D. M. Rowe, Thermoelectrics Handbook: Macro to Nano (CRC Press, Boca Raton, FL, 2006), chap. 48.3.6.
6. B. Huang, C. Lawrence, A. Gross, G.-S. Hwang, N. Ghafouri, S.-W. Lee, H. Kim, C.-P. Li, C. Uher, K. Najafi, and, M. Kaviany, J. Appl. Phys. 104, 113710 (2008).
7. A. Mzerd, D. Sayah, G. Brun, J. C. Tedenac, and, A. Boyer, J. Mater. Sci. Lett. 14, 194 (1995).
8. D. M. Rowe, CRC Handbook of Thermoelectrics (CRC Press, Boca Raton, FL, 1995), chap. 19.
9. A. Taylor, C. Mortensen, R. Rostek, N. Nguyen, and, D. C. Johnson, J. Electron. Mater. 39, 1981 (2010).
10. G. R. Miller, and, C.-Y. Li, J. Phys. Chem. Solids 26, 173 (1965).
11. S. Nakajima, J. Phys. Chem. Solids 24, 479 (1963).
12. H. Böttner, A. Schubert, H. Kölbel, A. Gavrikov, A. Mahlke, and, J. Nurnus, in: Proceedings of the 23rd International Conference on Thermoelectrics (ICT 2004), Adelaide, Australia, 2004 (IEEE, Piscataway, NJ, 2004), Paper No. 9.
13. J. D. König, M. Winkler, S. Buller, W. Bensch, U. Schürmann, L. Kienle, and, H. Böttner, J. Electron. Mater. 40, 1266 (2011).
14. N. Peranio, and, O. Eibl, J. Appl. Phys. 103, 024314 (2008).
15. N. Peranio, and, O. Eibl, Phys. Status Solidi A 204, 3243 (2007).
16. M. Stordeur, M. Stölzer, H. Sobotta, and, V. Riede, Phys. Status Solidi B 150, 165 (1988).
17. J. Horák, K. Äermák, and, L. Koudelka, J. Phys. Chem. Solids 47, 805 (1986).
18. C. Drasar, P. Lostak, and, C. Uher, J. Electron. Mater. 39, 2162 (2010).
19. T. L. Anderson, and, H. B. Krause, Acta Crystallogr., Sect. B: Struct. Sci. 30, 1307 (1974).