Room temperature giant and linear magnetoresistance in topological insulator Bi 2Te 3 nanosheets

Physical Review Letters

Volumn 108, Issue 26, 2012, Pages

  Wang, Xiaolin ^a   Du, Yi ^a   Dou, Shixue ^a   Zhang, Chao ^a  

^a UNIVERSITY OF WOLLONGONG   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSED MATTER; ELECTROMAGNETIC APPLICATIONS; FIELD INDUCED GAP; HIGHER TEMPERATURES; INSULATING STATE; LINEAR MAGNETORESISTANCE; MEASURED FIELD; METALLIC SURFACE; QUANTUM EFFECTS; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; TOPOLOGICAL INSULATORS;

ELECTRIC INSULATORS; ELECTRIC RESISTANCE; GALVANOMAGNETIC EFFECTS; MAGNETIC FIELDS; MAGNETOELECTRONICS; NANOSHEETS; QUANTUM ELECTRONICS;

GIANT MAGNETORESISTANCE;

EID: 84863202775     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.108.266806     Document Type: Article

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