Strain state, film and surface morphology of epitaxial topological insulator Bi2Se3 films on Si(111)

Thin Solid Films

Volumn 564, Issue , 2014, Pages 241-245

  Klein, C ^a   Vyshnepolsky, M ^a   Kompch, A ^a   Klasing, F ^a   Hanisch Blicharski, A ^a   Winterer, M ^a   Horn Von Hoegen, M ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Bismuth selenide; Lattice parameter; Molecular beam epitaxy; Spin orbit coupling; Spot profile analysis low energy electron diffraction; Surface state; Topological insulator; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC INSULATORS; LATTICE CONSTANTS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SELENIUM COMPOUNDS; SILICON; SURFACE STATES; X RAY DIFFRACTION;

BISMUTH SELENIDE; BULK MORPHOLOGIES; DIFFRACTION PEAKS; PRECISE DETERMINATIONS; ROTATIONAL DOMAINS; SPIN-ORBIT-COUPLING; SPOT PROFILE ANALYSIS; TOPOLOGICAL INSULATORS;

EPITAXIAL GROWTH;

EID: 84903949041     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.04.024     Document Type: Article

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