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Applied Physics Letters

Volumn 100, Issue 21, 2012, Pages

Gate-controlled linear magnetoresistance in thin Bi 2Se 3 sheets

(4) Gao, B F a,c Gehring, P a Burghard, M a Kern, K a,b

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b EPFL (Switzerland)

c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BACK GATES; BULK CONDUCTION BANDS; LINEAR MAGNETORESISTANCE; NEGATIVE GATE VOLTAGES;

ELECTRIC RESISTANCE; MAGNETOELECTRONICS;

MAGNETORESISTANCE;

EID: 84861833406 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4719196 Document Type: Article

Times cited : (82)

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