Theoretical study on strain induced variations in electronic properties of 2 H -MoS2 bilayer sheets

Applied Physics Letters

Volumn 104, Issue 5, 2014, Pages

  Dong, Liang ^a   Dongare, Avinash M ^a   Namburu, Raju R ^b   O'Regan, Terrance P ^b   Dubey, Madan ^b  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ENERGY GAP; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; STRAIN;

AB INITIO SIMULATIONS; BI-LAYER STRUCTURE; BIAXIAL STRAINS; CARRIER EFFECTIVE MASS; INDIRECT BAND GAP; STRAIN DEPENDENCE; THEORETICAL STUDY; UNI-AXIAL STRAINS;

SULFUR COMPOUNDS;

EID: 84899870705     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4863827     Document Type: Article

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