Atomic layer deposition of AlF3 using trimethylaluminum and hydrogen fluoride

Journal of Physical Chemistry C

Volumn 119, Issue 25, 2015, Pages 14185-14194

  Lee, Younghee ^a   Dumont, Jaime W ^a   Cavanagh, Andrew S ^a   George, Steven M ^a,b  

^a UNIVERSITY OF COLORADO   (United States)

^b University of Colorado at Boulder   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CRYSTAL IMPURITIES; FILM GROWTH; FLUORINE COMPOUNDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LITHIUM-ION BATTERIES; PROTECTIVE COATINGS; QUARTZ CRYSTAL MICROBALANCES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETERS; SPECTROSCOPIC ELLIPSOMETRY; STRETCHING; VIBRATION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

HYDROGEN FLUORIDE; INFRARED ABSORBANCE; LIMITING BEHAVIOR; QUADRUPOLE MASS SPECTROMETER; RUTHERFORD BACKSCATTERING SPECTROMETRY; SITU QUARTZ CRYSTAL MICROBALANCE; STRETCHING VIBRATIONS; TRIMETHYLALUMINUM;

ALUMINUM COMPOUNDS;

EID: 84933049129     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/acs.jpcc.5b02625     Document Type: Article

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