Investigation of misfit dislocation leakage in supercritical strained silicon MOSFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 493-497

  Fiorenza, J G ^a   Braithwaite, G ^a   Leitz, C ^a   Currie, M T ^a   Cheng, Z Y ^a   Yang, V K ^a   Langdo, T ^a   Carlin, J ^a   Somerville, M ^b   Lochtefeld, A ^a   Badawi, H ^a   Bulsara, M T ^a  

^a AmberWave Systems Corporation   (United States)

^b FRANKLIN W OLIN COLLEGE OF ENGINEERING   (United States)

Author keywords

Critical thickness; Photon emission microscopy; Strained silicon

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN; HETEROJUNCTIONS; LANTHANUM COMPOUNDS; MOSFET DEVICES; PHOTONS; SILICON;

CRITICAL THICKNESS; DC IV MEASUREMENTS; EMISSION MEASUREMENT; IV CHARACTERISTICS; PHOTON EMISSION MICROSCOPY; STRAINED SILICON; STRAINED SILICON FILMS; STRAINED SILICON MOSFETS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84932120930     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315378     Document Type: Conference Paper

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