Effects of Na and MoS2 on Cu2ZnSnS4 thin-film solar cell

Progress in Photovoltaics: Research and Applications

Volumn 23, Issue 7, 2015, Pages 862-873

  Yang, Kee Jeong ^a   Sim, Jun Hyoung ^a   Jeon, Boram ^a   Son, Dae Ho ^a   Kim, Dae Hwan ^a   Sung, Shi Joon ^a   Hwang, Dae Kue ^a   Song, Soomin ^b   Khadka, Dhruba B ^b   Kim, Junho ^b   Kang, Jin Kyu ^a  

^a Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^b SolarLight Ltd   (South Korea)

Author keywords

back contact annealing; CZTS; defect; MoS2; Na

Indexed keywords

ANNEALING; CADMIUM TELLURIDE; CONVERSION EFFICIENCY; COPPER COMPOUNDS; DEFECT DENSITY; DEFECTS; DEPOSITION; EFFICIENCY; ENERGY GAP; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; OPEN CIRCUIT VOLTAGE; SELENIUM COMPOUNDS; SODIUM; SOLAR CELLS; TEMPERATURE DISTRIBUTION; THIN FILM SOLAR CELLS; TIN COMPOUNDS; ZINC COMPOUNDS;

ABSORPTION CO-EFFICIENT; ANNEALING TEMPERATURES; BACK CONTACT; CZTS; EXTERNAL QUANTUM EFFICIENCY; MOS2; POWER CONVERSION EFFICIENCIES; TEMPERATURE DEPENDENCE;

MOLYBDENUM;

EID: 84931574974     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2500     Document Type: Article

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