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Volumn , Issue , 2011, Pages 000075-000078

Applications of admittance spectroscopy in photovoltaic devices beyond majority-carrier trapping defects

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE MEASUREMENTS; ADMITTANCE SPECTROSCOPIES; CDTE; CU(IN , GA)SE; DATA INTERPRETATION; HETERO INTERFACES; HIT CELLS; MINORITY CARRIER LIFETIMES; NON-OHMIC CONTACTS; ORGANIC PHOTOVOLTAICS; PHOTOVOLTAIC DEVICES; PHOTOVOLTAIC TECHNOLOGY; PHYSICAL MECHANISM; REVERSE BIAS; TRAPPING DEFECTS;

EID: 84861023213     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6185849     Document Type: Conference Paper
Times cited : (15)

References (14)
  • 1
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    • Losee, D.L.1
  • 6
    • 79955714653 scopus 로고    scopus 로고
    • Determining the Defect Density of States by Temperature Derivative Admittance Spectroscopy
    • J.V. Li and D.H. Levi, "Determining the Defect Density of States by Temperature Derivative Admittance Spectroscopy," J. Appl. Phys. 109, 2011, pp. 083701.
    • (2011) J. Appl. Phys. , vol.109 , pp. 083701
    • Li, J.V.1    Levi, D.H.2
  • 7
    • 18444388296 scopus 로고    scopus 로고
    • The Determination of Carrier Mobilities in CIGS Photovoltaic Devices Using High-Frequency Admittance Measurements
    • J.W. Lee, J.D. Cohen, and W.N. Shafarman, "The Determination of Carrier Mobilities in CIGS Photovoltaic Devices Using High-Frequency Admittance Measurements," Thin Solid Films 480-481, 2005, pp. 336-340.
    • (2005) Thin Solid Films 480481 , pp. 336-340
    • Lee, J.W.1    Cohen, J.D.2    Shafarman, W.N.3
  • 8
    • 77957676077 scopus 로고    scopus 로고
    • A Method to Measure Resistivity, Mobility, and Absorber Thickness in Thin-Film Solar Cells with Application to CdTe Devices
    • J.V. Li, X. Li, D.S. Albin, and D.H. Levi, "A Method to Measure Resistivity, Mobility, and Absorber Thickness in Thin-Film Solar Cells with Application to CdTe Devices," Sol. Energy Mat. Sol. Cells 94, 2010, pp. 2073-2077.
    • (2010) Sol. Energy Mat. Sol. Cells , vol.94 , pp. 2073-2077
    • Li, J.V.1    Li, X.2    Albin, D.S.3    Levi, D.H.4
  • 12
    • 77957747184 scopus 로고    scopus 로고
    • Discussion of Some 'Trap Signatures'Observed by Admittance Spectroscopy in CdTe Thin-Film Solar Cells
    • J.V. Li, S.W. Johnston, X. Li, D.S. Albin, T.A. Gessert, and D.H. Levi, "Discussion of Some 'Trap Signatures'Observed by Admittance Spectroscopy in CdTe Thin-Film Solar Cells," J. Appl. Phys. 108, 2010, pp. 064501.
    • (2010) J. Appl. Phys. , vol.108 , pp. 064501
    • Li, J.V.1    Johnston, S.W.2    Li, X.3    Albin, D.S.4    Gessert, T.A.5    Levi, D.H.6
  • 14
    • 0016082583 scopus 로고
    • Minority Carrier Lifetime Measurement in GaAs
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    • Pence Jr., I.W.1    Greiling, P.T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.