Control of an interfacial MoSe 2 layer in Cu 2ZnSnSe 4 thin film solar cells: 8.9 power conversion efficiency with a TiN diffusion barrier

Applied Physics Letters

Volumn 101, Issue 5, 2012, Pages

  Shin, Byungha ^a   Zhu, Yu ^a   Bojarczuk, Nestor A ^a   Jay Chey, S ^a   Guha, Supratik ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; GLASS SUBSTRATES; LAYER THICKNESS; LONG LIFETIME; PHOTOGENERATED CARRIERS; PHOTOLUMINESCENCE MEASUREMENTS; POST DEPOSITION ANNEALING; POWER CONVERSION EFFICIENCIES; THERMAL CO-EVAPORATION; THIN FILM SOLAR CELLS;

CONVERSION EFFICIENCY; DIFFUSION BARRIERS; SOLAR CELLS; SUBSTRATES; THERMAL EVAPORATION; TITANIUM NITRIDE;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84864663966     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4740276     Document Type: Article

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