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Volumn 20, Issue 1, 2012, Pages 6-11

Device characteristics of a 10.1% hydrazine-processed Cu 2ZnSn(Se,S) 4 solar cell

Author keywords

Cu 2ZnSn(S,Se) 4; earth abundant; kesterite; solution processing; thin film solar cell

Indexed keywords

CAPACITANCE SPECTROSCOPY; CU(IN , GA)SE; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; EFFICIENCY LEVELS; INTERFACE RECOMBINATION; KESTERITES; MINORITY CARRIER LIFETIMES; POWER CONVERSION EFFICIENCIES; SERIES RESISTANCES; SOLUTION PROCESS; SOLUTION PROCESSING; TEMPERATURE DEPENDENCE; THIN-FILM SOLAR CELLS; THIN-FILM TECHNOLOGY;

EID: 84855310625     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1160     Document Type: Article
Times cited : (761)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.