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Volumn 102, Issue 9, 2013, Pages

On the kinetics of MoSe2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact

Author keywords

[No Author keywords available]

Indexed keywords

BACK CONTACT; CRITICAL PARTS; DEVICE PROCESSING; INTERFACIAL LAYER; TEMPERATURE DEPENDENT; THIN FILM SOLAR CELLS;

EID: 84875169357     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794422     Document Type: Article
Times cited : (112)

References (13)
  • 8
    • 24544466879 scopus 로고
    • 10.1107/S0365110X6300311X
    • P. B. James and M. T. Lavik, Acta Cryst. 16, 1183 (1963). 10.1107/S0365110X6300311X
    • (1963) Acta Cryst. , vol.16 , pp. 1183
    • James, P.B.1    Lavik, M.T.2
  • 9
    • 84875157250 scopus 로고    scopus 로고
    • 2 layer; however, the interpretation of the parameters such as diffusivity is dependent on the assumption.
    • 2 layer; however, the interpretation of the parameters such as diffusivity is dependent on the assumption.
  • 10
    • 84875185179 scopus 로고    scopus 로고
    • 2 compound and that is present only when there is an external source of Se (i.e., Se vapor introduced during the annealing).
    • 2 compound and that is present only when there is an external source of Se (i.e., Se vapor introduced during the annealing).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.