N-type silicon photocathodes with Al-doped rear p+ emitter and Al2O3-coated front surface for efficient and stable H2 production

Applied Physics Letters

Volumn 106, Issue 21, 2015, Pages

  Fan, Ronglei ^a   Min, Jiawei ^a   Li, Yian ^a   Su, Xiaodong ^a   Zou, Shuai ^a   Wang, Xusheng ^a   Shen, Mingrong ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COATINGS; DOPING (ADDITIVES); ELECTROCHEMISTRY; ELECTRODES; FIELD EMISSION CATHODES; PHASE INTERFACES; PHOTOCATHODES; PHOTOELECTROCHEMICAL CELLS; SEMICONDUCTING SILICON; SILICON; SILICON WAFERS; SINGLE CRYSTALS;

AUGER RECOMBINATION; CONTINUOUS OPERATION; ELECTRODE SURFACES; N TYPE SILICON; PHOTOELECTROCHEMICAL PERFORMANCE; PROTECTING LAYER; SOLAR ILLUMINATION; WATER SPLITTING;

ALUMINUM;

EID: 84930631122     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4921845     Document Type: Article

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