Effective passivation of highly aluminum-doped p -type silicon surfaces using amorphous silicon

Applied Physics Letters

Volumn 91, Issue 11, 2007, Pages

  Bock, Robert ^a   Schmidt, Jan ^a   Brendel, Rolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS SILICON; DOPING (ADDITIVES); PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCREEN PRINTING;

PHOTOCONDUCTANCE DECAY TECHNIQUES; SATURATION CURRENT DENSITIES; SILICON SURFACES;

SILICON WAFERS;

PASSIVITY; SILICON; SILK SCREEN PRINTING;

EID: 34548678907     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2784193     Document Type: Article

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