Milestones achieved in IGBT development over the last 25 years (1984-2009)

IEEJ Transactions on Industry Applications

Volumn 131, Issue 1, 2011, Pages

  Tokura, Norihito ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

FS IGBT; IEGT; IGBT; Non Latch Up; Power semiconductor device; Silicon limit

Indexed keywords

FS-IGBT; IEGT; IGBT; NON-LATCH-UP; POWER SEMICONDUCTOR DEVICE; SILICON LIMIT;

BIPOLAR TRANSISTORS; EQUIPMENT; GALLIUM NITRIDE; POWER ELECTRONICS; RESEARCH; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; TUNNEL DIODES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 79951903116     PISSN: 09136339     EISSN: 13488163     Source Type: Journal    
DOI: 10.1541/ieejias.131.1     Document Type: Article

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