A normally-Off GaN HEMT with large drain current

IEEJ Transactions on Electronics, Information and Systems

Volumn 130, Issue 6, 2010, Pages

  Kanamura, Masahito ^a   Ohki, Toshihiro ^a   Kikkawa, Toshihide ^a   Imanishi, Kenji ^a   Hara, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

ALD; GaN; HEMT; Normally off

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS;

ALGAN/GAN; BREAKDOWN VOLTAGE; CAP LAYERS; CURRENT COLLAPSE; DEVICE APPLICATION; GAN CAP LAYERS; GAN HEMTS; INSULATED GATE; MAXIMUM DRAIN CURRENT; MIS-HEMT; RECESSED GATE;

DRAIN CURRENT;

EID: 77954441901     PISSN: 03854221     EISSN: 13488155     Source Type: Journal    
DOI: 10.1541/ieejeiss.130.929     Document Type: Article

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