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Volumn , Issue , 2011, Pages 1-6

GaN as a displacement technology for silicon in power management

Author keywords

[No Author keywords available]

Indexed keywords

DAILY LIVES; ELECTRICAL POWER; POWER MANAGEMENTS; POWER MOSFET; THEORETICAL BOUNDS;

EID: 81855168336     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2011.6063741     Document Type: Conference Paper
Times cited : (32)

References (25)
  • 4
    • 81855165242 scopus 로고    scopus 로고
    • http://www.businesswire.com/portal/site/home/permalink/?ndmViewId= news-view&newsId=20051005005600&newsLang=en
  • 5
    • 77957796794 scopus 로고    scopus 로고
    • EGaN - Silicon Power Shoot-Out: Comparing Figure of Merit (FOM)
    • September
    • Johan Strydom, "eGaN - Silicon Power Shoot-Out: Comparing Figure of Merit (FOM)" Power Electronics Technology, September 2010, http://powerelectronics.com/power-semiconductors/power-mosfets/ fomuseful-method-compare-201009/
    • (2010) Power Electronics Technology
    • Strydom, J.1
  • 6
    • 84924244329 scopus 로고    scopus 로고
    • Driving eGaN FETs in High Performance Power Conversion Systems
    • Alexander Lidow, Johan Strydom, Andrew Ferencz, and Robert V. White, "Driving eGaN FETs in High Performance Power Conversion Systems", PCIM Asia 2010
    • PCIM Asia 2010
    • Lidow, A.1    Strydom, J.2    Ferencz, A.3    White, R.V.4
  • 7
    • 84855187828 scopus 로고    scopus 로고
    • EPC2001 Data Sheet at: http://epc-co.com/epc/documents/datasheets/ EPC2001-datasheet-final.pdf
    • EPC2001 Data Sheet
  • 8
    • 81855188149 scopus 로고    scopus 로고
    • The eGaN FET - Silicon Power Shoot-Out: 2: Drivers, Layout
    • January
    • Johan Strydom, "The eGaN FET - Silicon Power Shoot-Out: 2: Drivers, Layout", Power Electronics Technology, January 2011, http:// powerelectronics.com/power-semiconductors/first-article-seriesgallium-nitride- 201101/
    • (2011) Power Electronics Technology
    • Strydom, J.1
  • 9
    • 81855165240 scopus 로고    scopus 로고
    • http://www.infineon.com/dgdl/IPD068N10N3+G-Rev2.1.pdf?folderId= db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1eb7aeb615d1
  • 10
    • 81855165238 scopus 로고    scopus 로고
    • eGaN FET SPICE Models at: http://epc-co.com/epc/ToolsandDesignSupport/ DeviceModels.aspx
    • eGaN FET SPICE Models
  • 11
    • 81855214584 scopus 로고    scopus 로고
    • http://www.national.com/en/power/index.html
  • 12
    • 81855214583 scopus 로고    scopus 로고
    • http://www.veeco.com/mocvd-turbodisc-k465-gallium-nitride/index.aspx
  • 13
    • 81855214585 scopus 로고    scopus 로고
    • http://aixtron.com/index.php?id=700&L=1
  • 15
    • 81855188150 scopus 로고    scopus 로고
    • http://www.nitronex.com/reliability.html
  • 16
    • 81855188148 scopus 로고    scopus 로고
    • http://www.irf.com/product-info/ganpowir/GaN1010.pdf
  • 22
    • 81855162757 scopus 로고    scopus 로고
    • http://www.semiconductor-today.com/news-items/2011/MAY/TRANSPHORM-170511. html
  • 23
    • 81855162760 scopus 로고    scopus 로고
    • http://www.engineeringtv.com/video/IR-600V-GaN-power


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.