A new assessment of the use of wide bandgap semiconductors and the potential for GaN

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2002, Pages 1747-1752

  Hudgins, J L ^a   Simin, G S ^a   Khan, M A ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIAMONDS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRONICS PACKAGING; ENERGY GAP; HETEROJUNCTIONS; PERMITTIVITY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS;

CRITICAL ELECTRIC FIELD; MATERIAL BANDGAP ENERGY; SPECIFIC POWER DEVICES; THERMAL COEFFICIENT OF EXPANSION; WIDE BANDGAP SEMICONDUCTORS;

GALLIUM NITRIDE;

EID: 0036442829     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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