Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model

IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings

Volumn , Issue , 2011, Pages 1795-1800

  Okamoto, Masayuki ^a,d   Toyoda, Genki ^a,d   Hiraki, Eiji ^a,d   Tanaka, Toshihiko ^a,d   Hashizume, Tamotsu ^b,d   Kachi, Tetsu ^c,d  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c Rd Management Section   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

AC AC direct converter; gallium nitride; HEMT; Loss evaluation; SBD; Spice Model

Indexed keywords

DIRECT CONVERTER; GAN HEMTS; GAN-BASED DEVICES; LOW LOSS; NEW SWITCHING DEVICES; POWER-LOSSES; SBD; SILICON-BASED; SIMULATION PROGRAM WITH INTEGRATED CIRCUIT EMPHASIS; SPICE MODEL; SPICE SIMULATIONS; STATIC AND DYNAMIC; SWITCHING SPEED; WIDE-BAND-GAP SEMICONDUCTOR;

COMPUTER SIMULATION; ENERGY CONVERSION; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; TRANSISTORS;

SPICE;

EID: 81855185990     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2011.6064002     Document Type: Conference Paper

References (10)

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