High-voltage GaN-HEMTs for power electronics applications and current collapse phenomena under high applied voltage

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Volumn , Issue , 2007, Pages 209-212

  Saito, Wataru ^a   Omura, Ichiro ^a   Tsuda, Kunio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Gan; High voltage; Power electronics

Indexed keywords

ACCELERATED ELECTRONS; CHANNEL ELECTRONS; CRYSTAL QUALITIES; ELECTRON TRAPPING; ELECTRONICS APPLICATIONS; FIELD-PLATE STRUCTURES; GAN; HIGH VOLTAGE;

DEFECTS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE;

GALLIUM NITRIDE;

EID: 84887473522     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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