Single crystalline nitrogen-doped InP nanowires for low-voltage field-effect transistors and photodetectors on rigid silicon and flexible mica substrates

Nano Energy

Volumn 15, Issue , 2015, Pages 293-302

  Duan, Tingyuan ^a   Liao, Chongnan ^b   Chen, Tao ^a   Yu, Neng ^a   Liu, Yuan ^a   Yin, Hong ^a   Xiong, Zu Jing ^a   Zhu, Ming Qiang ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b WUHAN UNIVERSITY   (China)

Author keywords

Field effect transistor; Flexible photodetector; Low power consumption; N doped InP nanowires; Organic inorganic

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); FABRICATION; HETEROJUNCTIONS; MICA; NANOWIRES; PHOTODETECTORS; PHOTONS; PLASTIC BOTTLES; SEMICONDUCTING SILICON; SILICATE MINERALS; SILICON; SILICON WAFERS; SUBSTRATES; TRANSISTORS;

ELECTRICAL TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTOR (FETS); FLEXIBLE PHOTODETECTORS; HETEROJUNCTION PHOTODETECTORS; INP; LOW-POWER CONSUMPTION; ORGANIC-INORGANIC; POLYETHYLENE TEREPHTHALATES (PET);

FIELD EFFECT TRANSISTORS;

EID: 84929580906     PISSN: 22112855     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nanoen.2015.05.002     Document Type: Article

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