Effects of Be doping on InP nanowire growth mechanisms

Applied Physics Letters

Volumn 101, Issue 26, 2012, Pages

  Yee, R J ^a   Gibson, S J ^a   Dubrovskii, V G ^b,c   Lapierre, R R ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b ST PETERSBURG ACADEMIC UNIVERSITY   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION LENGTH; DIFFUSION LIMITED; DOPANT CONCENTRATIONS; GROWTH REGIME; INP; ISLAND NUCLEATION; NANOWIRE GROWTH; VAPOUR-LIQUID-SOLID MECHANISMS;

GAS SOURCE MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; SEMICONDUCTOR DOPING;

NANOWIRES;

EID: 84871793771     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773206     Document Type: Article

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