-
1
-
-
77952359259
-
Semiconductor nanowire: What's next?
-
Yang, P. D.; Yan, R. X.; Fardy, M. Semiconductor nanowire: What's next? Nano Lett. 2010, 10, 1529-1536.
-
(2010)
Nano Lett.
, vol.10
, pp. 1529-1536
-
-
Yang, P.D.1
Yan, R.X.2
Fardy, M.3
-
2
-
-
70349644298
-
A comprehensive review of one-dimensional metal-oxide nanostructure photodetectors
-
Zhai, T. Y.; Fang, X. S.; Liao, M. Y.; Xu, X. J.; Zeng, H. B.; Bando, Y.; Golberg, D. A comprehensive review of one-dimensional metal-oxide nanostructure photodetectors. Sensors2009, 9, 6504-6529.
-
(2009)
Sensors
, vol.9
, pp. 6504-6529
-
-
Zhai, T.Y.1
Fang, X.S.2
Liao, M.Y.3
Xu, X.J.4
Zeng, H.B.5
Bando, Y.6
Golberg, D.7
-
3
-
-
0035943358
-
Highly polarized photoluminescence and photodetection from single indium phosphide nanowires
-
Wang, J. F.; Gudiksen, M. S.; Duan, X. F.; Cui, Y.; Lieber, C. M. Highly polarized photoluminescence and photodetection from single indium phosphide nanowires. Science2001, 293, 1455-1457.
-
(2001)
Science
, vol.293
, pp. 1455-1457
-
-
Wang, J.F.1
Gudiksen, M.S.2
Duan, X.F.3
Cui, Y.4
Lieber, C.M.5
-
4
-
-
1942445309
-
Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination
-
Han, S.; Jin, W.; Zhang, D. H.; Tang, T.; Li, C.; Liu, X. L.; Liu, Z. Q.; Lei, B.; Zhou, C. W. Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination. Chem. Phys. Lett. 2004, 389, 176-180.
-
(2004)
Chem. Phys. Lett.
, vol.389
, pp. 176-180
-
-
Han, S.1
Jin, W.2
Zhang, D.H.3
Tang, T.4
Li, C.5
Liu, X.L.6
Liu, Z.Q.7
Lei, B.8
Zhou, C.W.9
-
5
-
-
69549110180
-
Photocurrent and photoconductance properties of a GaAs nanowire
-
Thunich, S.; Prechtel, L.; Spirkoska, D.; Abstreiter, G.; Morral, A. F.; Holleitner, A. W. Photocurrent and photoconductance properties of a GaAs nanowire. Appl. Phys. Lett. 2009, 95, 083111.
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 083111
-
-
Thunich, S.1
Prechtel, L.2
Spirkoska, D.3
Abstreiter, G.4
Morral, A.F.5
Holleitner, A.W.6
-
6
-
-
52349107451
-
Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
-
Marshall, A. R. J.; Tan, C. H.; Steer, M. J.; David, J. P. R. Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes. Appl. Phys. Lett. 2008, 93, 111107.
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 111107
-
-
Marshall, A.R.J.1
Tan, C.H.2
Steer, M.J.3
David, J.P.R.4
-
7
-
-
0040329852
-
Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers
-
Huang, X. D.; Stintz, A.; Li, H.; Lester, L. F.; Cheng, J. L.; Malloy, K. J. Passive mode-locking in 1. 3 μm two-section InAs quantum dot lasers. Appl. Phys. Lett. 2001, 78, 2825(1-3).
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 2825
-
-
Huang, X.D.1
Stintz, A.2
Li, H.3
Lester, L.F.4
Cheng, J.L.5
Malloy, K.J.6
-
8
-
-
0035886233
-
Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature
-
Borri, P.; Schneider, S.; Langbein, W.; Woggon, U.; Zhukov, A. E.; Ustinov, V. M.; Ledentsov, N. N.; Alferov, Z. I.; Ouyang, D.; Bimberg, D. Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1. 3-μm-wavelength at room temperature. Appl. Phys. Lett. 2001, 79, 2633-2635.
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 2633-2635
-
-
Borri, P.1
Schneider, S.2
Langbein, W.3
Woggon, U.4
Zhukov, A.E.5
Ustinov, V.M.6
Ledentsov, N.N.7
Alferov, Z.I.8
Ouyang, D.9
Bimberg, D.10
-
9
-
-
84875417868
-
Ultrafast photocurrents and THz generation in single InAs-nanowires
-
Erhard, N.; Seifert, P.; Prechtel, L.; Hertenberger, S.; Karl, H.; Abstreiter, G.; Koblmüller, G.; Holleitner, A. W. Ultrafast photocurrents and THz generation in single InAs-nanowires. Ann. Phys. (Berlin)2013, 525, 180-188.
-
(2013)
Ann. Phys. (Berlin)
, vol.525
, pp. 180-188
-
-
Erhard, N.1
Seifert, P.2
Prechtel, L.3
Hertenberger, S.4
Karl, H.5
Abstreiter, G.6
Koblmüller, G.7
Holleitner, A.W.8
-
10
-
-
61649100813
-
Synthesis, contact printing, and device characterization of Ni-catalyzed, crystalline InAs nanowires
-
Ford, A. C.; Ho, J. C.; Fan, Z. Y.; Ergen, O.; Altoe, V.; Aloni, S.; Razavi, H.; Javey, A. Synthesis, contact printing, and device characterization of Ni-catalyzed, crystalline InAs nanowires. Nano Res. 2008, 1, 32-39.
-
(2008)
Nano Res.
, vol.1
, pp. 32-39
-
-
Ford, A.C.1
Ho, J.C.2
Fan, Z.Y.3
Ergen, O.4
Altoe, V.5
Aloni, S.6
Razavi, H.7
Javey, A.8
-
11
-
-
58449093572
-
Control of InAs nanowire growth directions on Si
-
Tomioka, K.; Motohisa, J.; Hara, S.; Fukui, T. Control of InAs nanowire growth directions on Si. Nano Lett. 2008, 8, 3475-3480.
-
(2008)
Nano Lett.
, vol.8
, pp. 3475-3480
-
-
Tomioka, K.1
Motohisa, J.2
Hara, S.3
Fukui, T.4
-
12
-
-
33847049888
-
High electron mobility InAs nanowire field-effect transistors
-
Dayeh, S. A.; Aplin, D. P. R.; Zhou, X. T.; Yu, K. L.; Yu, E. T.; Wang, D. L. High electron mobility InAs nanowire field-effect transistors. Small2007, 3, 326-332.
-
(2007)
Small
, vol.3
, pp. 326-332
-
-
Dayeh, S.A.1
Aplin, D.P.R.2
Zhou, X.T.3
Yu, K.L.4
Yu, E.T.5
Wang, D.L.6
-
13
-
-
0035398734
-
Improvement of current leakage in the InAs photodetector by molecular beam epitaxy
-
Lin, R. M.; Tang, S. F.; Lee, S. C.; Kuan, C. H. Improvement of current leakage in the InAs photodetector by molecular beam epitaxy. J. Cryst. Growth2001, 227, 167-171.
-
(2001)
J. Cryst. Growth
, vol.227
, pp. 167-171
-
-
Lin, R.M.1
Tang, S.F.2
Lee, S.C.3
Kuan, C.H.4
-
14
-
-
77952348865
-
A surface plasmon enhanced infrared photodetector based on InAs quantum dots
-
Chang, C. C.; Sharma, Y. D.; Kim, Y. S.; Bur, J. A.; Shenoi, R. V.; Krishna, S.; Huang, D. H.; Lin, S. Y. A surface plasmon enhanced infrared photodetector based on InAs quantum dots. Nano Lett. 2010, 10, 1704-1709.
-
(2010)
Nano Lett.
, vol.10
, pp. 1704-1709
-
-
Chang, C.C.1
Sharma, Y.D.2
Kim, Y.S.3
Bur, J.A.4
Shenoi, R.V.5
Krishna, S.6
Huang, D.H.7
Lin, S.Y.8
-
15
-
-
0007169866
-
Local tunneling spectroscopy of a Nb/InAs/Nb superconducting proximity system with a scanning tunneling microscope
-
Inoue, K.; Takayanagi, H. Local tunneling spectroscopy of a Nb/InAs/Nb superconducting proximity system with a scanning tunneling microscope. Phys. Rev. B1991, 43, 6214-6215.
-
(1991)
Phys. Rev. B
, vol.43
, pp. 6214-6215
-
-
Inoue, K.1
Takayanagi, H.2
-
16
-
-
61649109093
-
Diameter-dependent electron mobility of InAs nanowires
-
Ford, A. C.; Ho, J. C.; Chueh, Y. L.; Tseng, Y. C.; Fan, Z. Y.; Guo, J.; Bokor, J.; Javey, A. Diameter-dependent electron mobility of InAs nanowires. Nano Lett. 2009, 9, 360-365.
-
(2009)
Nano Lett.
, vol.9
, pp. 360-365
-
-
Ford, A.C.1
Ho, J.C.2
Chueh, Y.L.3
Tseng, Y.C.4
Fan, Z.Y.5
Guo, J.6
Bokor, J.7
Javey, A.8
-
17
-
-
84873307305
-
Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors
-
Chen, S. Y.; Wang, C. Y.; Ford, A. C.; Chou, J. C.; Wang, Y. C.; Wang, F. Y.; Ho, J. C.; Wang, H. C.; Javey, A.; Gan, J. Y. et al. Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors. Phys. Chem. Chem. Phys. 2013, 15, 2654-2659.
-
(2013)
Phys. Chem. Chem. Phys.
, vol.15
, pp. 2654-2659
-
-
Chen, S.Y.1
Wang, C.Y.2
Ford, A.C.3
Chou, J.C.4
Wang, Y.C.5
Wang, F.Y.6
Ho, J.C.7
Wang, H.C.8
Javey, A.9
Gan, J.Y.10
-
18
-
-
84875748196
-
Fabrication of high-quality ZnTe nanowires toward high-performance rigid/flexible visible-light photodetectors
-
Liu, Z.; Chen, G.; Liang, B.; Yu, G.; Huang, H. T.; Chen, D.; Shen, G. Z. Fabrication of high-quality ZnTe nanowires toward high-performance rigid/flexible visible-light photodetectors. Opt. Express2013, 21, 7799-7810.
-
(2013)
Opt. Express
, vol.21
, pp. 7799-7810
-
-
Liu, Z.1
Chen, G.2
Liang, B.3
Yu, G.4
Huang, H.T.5
Chen, D.6
Shen, G.Z.7
-
19
-
-
84876045534
-
Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates
-
Hu, P. A.; Wang, L. F.; Yoon, M.; Zhang, J.; Feng, W.; Wang, X. N.; Wen, Z. Z.; Idrobo, J. C.; Miyamoto, Y.; Geohegan, D. B. et al. Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates. Nano Lett. 2013, 13, 1649-1654.
-
(2013)
Nano Lett.
, vol.13
, pp. 1649-1654
-
-
Hu, P.A.1
Wang, L.F.2
Yoon, M.3
Zhang, J.4
Feng, W.5
Wang, X.N.6
Wen, Z.Z.7
Idrobo, J.C.8
Miyamoto, Y.9
Geohegan, D.B.10
-
20
-
-
84868713254
-
2 phototransistors with spectral response from ultraviolet to infrared
-
2 phototransistors with spectral response from ultraviolet to infrared. Adv. Mater. 2012, 24, 5832-5836.
-
(2012)
Adv. Mater.
, vol.24
, pp. 5832-5836
-
-
Choi, W.1
Cho, M.Y.2
Konar, A.3
Lee, J.H.4
Cha, G.B.5
Hong, S.C.6
Kim, S.7
Kim, J.8
Jena, D.9
Joo, J.10
-
21
-
-
84863011160
-
7 nanowire mats based ultraviolet photodetectors on rigid and flexible substrates
-
7 nanowire mats based ultraviolet photodetectors on rigid and flexible substrates. Opt. Express2012, 20, 2982-2991.
-
(2012)
Opt. Express
, vol.20
, pp. 2982-2991
-
-
Liu, Z.1
Huang, H.T.2
Liang, B.3
Wang, X.F.4
Wang, Z.R.5
Chen, D.6
Shen, G.Z.7
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