The electronic origin of shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene

Nanotechnology

Volumn 26, Issue 21, 2015, Pages

  Sa, Baisheng ^a   Li, Yan Ling ^b   Sun, Zhimei ^c   Qi, Jingshan ^b   Wen, Cuilian ^a   Wu, Bo ^a  

^a FUZHOU UNIVERSITY   (China)

^b JIANGSU NORMAL UNIVERSITY   (China)

^c BEIHANG UNIVERSITY   (China)

Author keywords

ab initio calculations; black phosphorus; electron effective mass; electronic structure; shear strain

Indexed keywords

ANISOTROPY; CALCULATIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; PHOSPHORUS; SHEAR STRAIN;

AB INITIO CALCULATIONS; AMBIENT CONDITIONS; DIRECT-TO-INDIRECT GAP TRANSITIONS; ELECTRON EFFECTIVE MASS; ELECTRONIC ANISOTROPY; FIRST-PRINCIPLES CALCULATION; INDIRECT TRANSITION; NANOELECTRONIC APPLICATIONS;

SHEAR FLOW;

EID: 84929497998     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/26/21/215205     Document Type: Article

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