Atomistic modeling of hole transport in ultra-thin body SOI pMOSFETs

Journal of Computational Electronics

Volumn 7, Issue 3, 2008, Pages 293-296

  Minari, Hideki ^a   Mori, Nobuya ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Crystalline orientation; HoleTransport; MOSFET; NEGF; Silicon; Simulation; Tight binding

Indexed keywords

DIFFERENTIAL EQUATIONS; GREEN'S FUNCTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES;

CRYSTALLINE ORIENTATION; HOLETRANSPORT; MOSFET; NEGF; SIMULATION; TIGHT-BINDING;

MOSFET DEVICES;

EID: 50949110581     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-007-0161-7     Document Type: Article

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