SiC power devices for next generation energy efficiency

ECS Transactions

Volumn 41, Issue 8, 2011, Pages 3-7

  Palmour, J W ^a   Das, M ^a   Ryu, S H ^a   Hull, B ^a   Cheng, L ^a   Zhang, Q ^a   Callanan, R ^a   O'Loughlin, M ^a   Burk, A ^a   Agarwal, A ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COST REDUCTION; ELECTRIC INVERTERS; ENERGY EFFICIENCY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOSFET DEVICES; NITRIDES; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILICON WAFERS;

EFFICIENCY GAIN; HIGH RELIABILITY; IMPROVE PERFORMANCE; MATERIALS TECHNOLOGY; SIC SCHOTTKY DIODE; SILICON CARBIDES (SIC); SUBSTRATE QUALITY; SWITCH-MODE POWER SUPPLIES;

POWER SEMICONDUCTOR DEVICES;

EID: 84863179781     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3631480     Document Type: Conference Paper

References (5)

1. M. K. Das et al., Proceedings of IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2008).
2. th European Conference on Power Electronics and Applications (EPE) (2009).
3. B. A. Hull, S-H. Ryu, C. Jonas, M. Das, M. O'Loughlin, R. Callanan, J. Richmond, A. Agarwal, J. Palmour, and S. Scozzie, Materials Science Forum, 615-617, 749 (2009).
4. B. Burger, D. Kranzer, O. Stalter, 5th International Conference on Integrated Power Electronics Systems (CIPS) (2008).
5. S-H. Ryu, L. Cheng, S. Dhar, C. Capell, C. Jonas, A. Agarwal, J. Palmour, A. Lelis, C. Scozzie, and B. Geil, Proceedings of The 23nd International Symposium on Power Semiconductor Devices and IC's (ISPSD) (2011).