Characterisation of 4H-SiC Schottky diodes for IGBT applications

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 5, Issue , 2000, Pages 2941-2947

  Johnson, C M ^a   Rahimo, M ^b   Wright, N G ^a   Hinchley, D A ^b   Horsfall, A B ^a   Morrison, D J ^a   Knights, K ^c  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b AB Mikroelektronik GmbH   (United Kingdom)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; HIGH TEMPERATURE TESTING; INSULATED GATE BIPOLAR TRANSISTORS; PERFORMANCE; POWER ELECTRONICS; SILICON CARBIDE;

POWER ELECTRONIC SYSTEMS; SILICON CARBIDE SCHOTTKY DIODES;

SCHOTTKY BARRIER DIODES;

EID: 0034502035     PISSN: 01972618     EISSN: None     Source Type: Journal    
DOI: 10.1109/IAS.2000.882584     Document Type: Article

References (6)

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2. R. Hel M. Fullmann E. Niemann SiC power rectifiers proceedings of International Conference on Silicon Carbide and Related Materials (ICSCRM'99) proceedings of International Conference on Silicon Carbide and Related Materials (ICSCRM'99) 1999
3. Q. Wahab A. Ellison J. Zhang U. Forsberg E. Janzen Designing physical simulations and fabrication of high-voltage (3.85kV) 4H-SiC Schottky rectifiers processed on hot-wall and high-temperature CVD films proceedings of International Conference on Silicon Carbide and Related Materials (ICSCRM'99) proceedings of International Conference on Silicon Carbide and Related Materials (ICSCRM'99) 1999
4. R. Rupp M. Treu A. Mauder E. Griebl W. Werner W. Bartsch D. Stephani Performance and reliability issues of SiC-Schottky diodes proceedings of International Conference on Silicon Carbide and Related Materials (ICSCRM'99) proceedings of International Conference on Silicon Carbide and Related Materials (ICSCRM'99) 1999
5. A. P. Knights M.A. Lourenço K.P. Homewood D.J. Morrison N.G. Wright S. Ortolland C.M. Johnson A.G. O'Neill P.G. Coleman Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30keV Ar+ implantation Journal of Applied Physics April 2000
6. K. J. Schoen J. M. Woodall J. A. Cooper M.R. Melloch Design Considerations of Experimental Analysis of High Voltage SiC Schottky Barrier Rectifiers IEEE Trans. On Electron Devices 45 7 1595 1998