Introducing a 1200V vertical merged IGBT and Power MOSFET: The HUBFET

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2012, Pages 152-156

  Donnellan, B T ^a   Mawby, P A ^a   Rahimo, M ^b   Storasta, L ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BI-POLAR MODE; BIPOLAR FIELD-EFFECT TRANSISTOR; PIN DIODE; POWER MOSFET; PROTOTYPE DEVICES;

EXHIBITIONS; MERGERS AND ACQUISITIONS; POWER ELECTRONICS; SEMICONDUCTOR DIODES;

MOSFET DEVICES;

EID: 84860200913     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2012.6165812     Document Type: Conference Paper

References (10)

1. Donnellan et al. Modelling of current sharing in paralleled current limiting superjunction MOSFETS with common gate drive. Proceedings of the International Seminar on Power Semiconductors, 2010, p185-189.
2. Baliga. Fundamentals of Power Semiconductor Devices. Springer, 2008.
3. Böving et al. Ultrathin 400 V FS IGBT for HEV applications. Proceedings of the International Symposium on Power Semiconductor Devices and IC's, 2011, p64-67.
4. Haraguchi et al. 600V LPT-CSTBT on advanced thin wafer technology. Proceedings of the International Symposium on Power Semiconductor Devices and IC's, 2011, p68-71.
5. H. Takahashi, A. Yamamoto, S. Anon, T. Minato 1200V Reverse Conducting IGBT. Proceedings of the International Symposium on Power Semiconductor Devices and IC's, 2004, p 133.
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7. Rahimo et al. The Bi-Mode Insulated Gate Transistor (BiGT) a potential technology for high power applications. Proceedings of the International Symposium on Power Semiconductor Devices and IC's, 2009, p283-286.
8. Rahimo et al. 1700V Bi-Mode Insulated Gate Transistor (BiGT) on thin wafer technology. Proceedings of the International Seminar on Power Semiconductors, 2010, p243-247.
9. Storasta et al. The radial layout design concept for the Bi-Mode Insulated Gate Transistor. Proceedings of the International Symposium on Power Semiconductor Devices and IC's, 2011, p56-59.
10. A. Bourennane, JL Sanchez, F. Richardeau, E. Imbernon, M. Breil. On the integration of a PIN diode and an IGBT for a specific application. Proceedings of the International Seminar on Power Semiconductors, 2006, Czech Rep., p 145