Recent progress in AlGaN-based deep-UV LEDs

Electronics and Communications in Japan

Volumn 98, Issue 5, 2015, Pages 1-8

  Hirayama, Hideki ^a   Fujikawa, Sachie ^a   Kamata, Norihiko ^b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

AlGaN; AlN; crystal growth; deep UV LED; internal quantum efficiency; MOCVD

Indexed keywords

AIR CLEANERS; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; CRYSTAL GROWTH; CRYSTALLIZATION; EFFICIENCY; GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR ALLOYS; STERILIZATION (CLEANING);

ALGAN; CRYSTAL GROWTH TECHNIQUES; DEEP ULTRAVIOLET; DEEP UV LED; EXTERNAL QUANTUM EFFICIENCY; INTERNAL QUANTUM EFFICIENCY; RECENT PROGRESS; THREADING DISLOCATION DENSITIES;

QUANTUM EFFICIENCY;

EID: 84926674484     PISSN: 19429533     EISSN: 19429541     Source Type: Journal    
DOI: 10.1002/ecj.11667     Document Type: Article

References (21)

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