SnS absorber thin films by co-evaporation: Optimization of the growth rate and influence of the annealing

Thin Solid Films

Volumn 582, Issue , 2015, Pages 249-252

  Robles, Víctor ^a   Trigo, Juan Francisco ^a   Guillén, Cecilia ^a   Herrero, José ^a  

^a CIEMAT   (Spain)

Author keywords

Absorption coefficient; Annealing; Band gap energy; Electrical resistivity; Film thickness; Growth rate; X ray diffraction

Indexed keywords

ANNEALING; DEPOSITION RATES; ELECTRIC CONDUCTIVITY; ENERGY GAP; EVAPORATION; FILM PREPARATION; FILM THICKNESS; GROWTH RATE; IV-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; LIME; OPTICAL PROPERTIES; SUBSTRATES; SULFUR; THIN FILMS; TIN COMPOUNDS; X RAY DIFFRACTION;

ABSORPTION CO-EFFICIENT; BAND GAP ENERGY; SODA LIME GLASS SUBSTRATE; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE TEMPERATURE; SULFUR ATMOSPHERE; SULFUR TREATMENT; VARIOUS ATMOSPHERE;

SULFUR COMPOUNDS;

EID: 84926482930     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.10.081     Document Type: Conference Paper

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