Structural and optoelectronic properties of vacuum evaporated SnS thin films annealed in argon ambient

Applied Surface Science

Volumn 257, Issue 8, 2011, Pages 3670-3676

  Ghosh, Biswajit ^a   Bhattacharjee, Rupanjali ^a   Banerjee, Pushan ^a   Das, Subrata ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

Evaporation; FESEM; Photoresponse; SnS; X ray difraction

Indexed keywords

ANNEALING; ARGON; CARRIER CONCENTRATION; DEPOSITION; EVAPORATION; HALL MOBILITY; IV-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; SEMICONDUCTING FILMS; SULFUR COMPOUNDS; THERMAL EVAPORATION; THIN FILMS; TIN;

ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; FESEM; OPTOELECTRONIC PROPERTIES; P TYPE CONDUCTIVITY; PHOTORESPONSES; POST DEPOSITION ANNEALING; SUBSTRATE TEMPERATURE;

TIN COMPOUNDS;

EID: 78651346886     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.11.103     Document Type: Article

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