Effects of defects and thermal treatment on the properties of graphene

Vacuum

Volumn 116, Issue , 2015, Pages 90-95

  Jia, Kunpeng ^a   Su, Yajuan ^a   Chen, Yang ^a   Luo, Jun ^a   Yang, Jie ^a   Lv, Peng ^b   Zhang, Zihan ^b   Zhu, Huilong ^a   Zhao, Chao ^a   Ye, Tianchun ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Annealing; Defects; Doping; Graphene; Strain

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DEFECTS; DOPING (ADDITIVES); ION BOMBARDMENT; SEMICONDUCTOR DOPING; STRAIN;

COMPRESSIVE STRAIN; FREQUENCY SHIFT; GRAPHENE FILMS; ION DOSE; STRUCTURE DEFECTS; THERMAL ANNEALING PROCESS; THERMAL ANNEALING TREATMENT; THERMAL-ANNEALING;

GRAPHENE;

EID: 84925726029     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2015.03.003     Document Type: Article

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