Fabrication of a large-area Al-doped ZnO nanowire array photosensor with enhanced photoresponse by straining

Advanced Functional Materials

Volumn 22, Issue 18, 2012, Pages 3875-3881

  Wang, Ruey Chi ^a   Lin, Hsin Ying ^b   Wang, Chao Hung ^b   Liu, Chuan Pu ^b  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

flexible electronics; nanodevices; nanowires; photosensors

Indexed keywords

AL-DOPED ZNO; AL-DOPING; AVERAGE DIAMETER; IN-SITU; LOW BIAS; NANO DEVICE; NANO-DEVICES; PHOTO-SENSORS; PHOTORESPONSES; PHOTORESPONSIVITY; PHOTOSENSOR; REJECTION RATIOS; SCHOTTKY BARRIER HEIGHTS; SINGLE-CRYSTALLINE; STRAIN-DEPENDENT;

FLEXIBLE ELECTRONICS; MICROELECTRODES; NANOSTRUCTURED MATERIALS; NANOWIRES; PHOTOSENSITIVITY; STRAIN; ZINC OXIDE;

ALUMINUM;

EID: 84866513671     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201200344     Document Type: Article

References (22)

1. J. Chen, W. Lei, C. Li, Y. Zhang, Y. P. Cui, B. P. Wang, W. Q. Deng, Phys. Chem. Chem. Phys. 2011, 13, 13182.
2. J. J. Kim, K. S. Kim, G. Y. Jung, J. Mater. Chem. 2011, 21, 7730.
3. J. O. Hwang, D. H. Lee, J. Y. Kim, T. H. Han, B. H. Kim, M. K. Park, K. S. No, S. O. Kim, J. Mater. Chem. 2011, 21, 3432.
4. U. N. Maiti, S. Maiti, S. Goswami, D. Sarkar, K. K. Chattopadhyay, CrystEngComm 2011, 13, 1976.
5. A. Zainelabdin, S. Zaman, G. Amin, O. Nur, M. Willander, Nanoscale Res. Lett. 2010, 5, 1442.
6. J. Yi, J. M. Lee, W. I. Park, Sens. Actuators B 2011, 155, 264.
7. S. Xu, Y. Ding, Y. G. Wei, H. Fang, Y. Shen, A. K. Sood, D. L. Polla, Z. L. Wang, J. Am. Chem. Soc. 2009, 131, 6670.
8. Y. Qin, R. S. Yang, Z. L. Wang, J. Phys. Chem. C 2008, 112, 18734.
9. N. S. Liu, G. J. Fang, W. Zeng, H. Long, L. Y. Yuan, X. Z. Zhao, J. Phys. Chem. C 2011, 115, 570.
10. S. Bai, W. W. Wu, Y. Qin, N. Y. Cui, D. J. Bayerl, X. D. Wang, Adv. Funct. Mater. 2011, 21, 4464.
11. C. L. Kuo, R. C. Wang, C. P. Liu, J. L. Huang, Nanotechonology 2008, 19, 035605.
12. M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, P. Yang, Adv. Mater. 2001, 13, 113.
13. S. S. Lo, D. Huang, C. H. Tu, C. H. Hou, C. C. Chen, J. Phys. D: Appl. Phys. 2009, 42, 095420.
14. R. Ghosh, D. Basak, Appl. Phys. Lett. 2007, 90, 243106.
15. R. C. Wang, C. C. Hsu, S. J. Chen, Nanotechnology 2011, 22, 035704.
16. J. Zhou, Y. D. Gu, P. Fei, W. J. Mai, Y. F. Gao, R. S. Yang, G. Bao, Z. L. Wang, Nano Lett. 2008, 8, 3035.
17. S. N. Das, J.-H. Choi, J. P. Kar, K.-J. Moon, T. I. Lee, J.-M. Myoung, Appl. Phys. Lett. 2010, 96, 092111.
18. K.-I. Ogata, H. Dobashi, P. Russel, K. Koike, S. Sasa, M. Inoue, M. Yano, Phys. Status Solidi C 2011, 8, 522.
19. D. Y. Kim, J. Y. Son, Electrochem. Solid-State Lett. 2009, 12, J109.
20. R. R. Craig Jr., Mechanics of Materials, Wiley, New York 1996, Ch. 6.
21. J. Zhou, P. Fei, Y. D. Gu, W. J. Mai, Y. F Gao, R. S. Yang, G. Bao, Z. L. Wang, Nano Lett. 2008, 8, 3973.
22. X. D. Wang, J. Zhou, J. H. Song, J. Liu, N. S. Xu, Z. L. Wang, Nano Lett. 2006, 6, 2768.