Elaboration of Bi2Te3 by metal organic chemical vapor deposition

Thin Solid Films

Volumn 303, Issue 1-2, 1997, Pages 1-3

  Giani, A ^a   Pascal Delannoy, F ^a   Boyer, A ^a   Foucaran, A ^a   Gschwind, M ^b   Ancey, P ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b IMRA Europe SAS   (France)

Author keywords

Bismuth; Chemical vapour deposition; Tellurium

Indexed keywords

CRYSTAL STRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; SEMICONDUCTING BISMUTH COMPOUNDS; STOICHIOMETRY; SUBSTRATES; THERMAL EFFECTS; THERMOELECTRICITY; X RAY CRYSTALLOGRAPHY;

BISMUTH TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0031190714     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00089-8     Document Type: Article

References (12)

1. D.R. Lovett, Semimetals and Narrow-Bandgap Semiconductors, Pion Limited, London, 1977, p. 181.
2. A. Boyer, E. Cissé, Y. Azzouz and J.P. Chéron, Sensors Actuators A, 25-27 (1991) 637.
3. D.W. Rowe and C.M. Bhandari, Modern Thermoelectrics, Holt, Rinehart and Winston, London, 1983, p. 103.
4. N. Sakai, T. Kajiwara, K. Takemura, S. Mimomura and Y. Fuji, Solid State Commun., 40 (1981) 1045.
5. A. Mzerd, F. Tcheliebou, A. Sackda and A. Boyer, Sensors Actuators A, 46-47 (1995) 387.
6. Y.H. Shing, Y. Chang, A. Mirshafii, L. Hayashi, S.S. Roberts, J.Y. Josefouriez and N. Tran, J. Vac. Sci. Technol. A1, 2 (1983) 503.
7. A. Mzerd, D. Sayah, J.C. Tedenac and A. Boyer, J. Cryst. Growth, 140 (1994) 365.
8. F. Völklein, V. Baier, U. Dillner and Kassler, Thin Solid Films, 187 (1990) 253.
9. M. Takahashi, Y. Katou, K. Nagata and S. Furuta, Thin Solid Films, 240 (1994) 70.
10. F. Royo, A. Giani, F. Pascal-Delannoy, L. Gouskov, J.P. Malzac and J. Camassel, Mater. Sci. Eng., B28 (1994) 169.
11. T.J. Groshens, R.W. Gedridge, J.R. and C.K. Lowe-Ma, Chem. Mater., 6 (1994) 727.
12. H. Francombe, Philos. Mag., 10 (1964) 989.