Single-step deposition of high-mobility graphene at reduced temperatures

Nature Communications

Volumn 6, Issue , 2015, Pages

  Boyd, D A ^a   Lin, W H ^a   Hsu, C C ^a,b   Teague, M L ^a,b   Chen, C C ^a,b   Lo, Y Y ^c   Chan, W Y ^d   Su, W B ^d   Cheng, T C ^c   Chang, C S ^d   Wu, C I ^c   Yeh, N C ^a,b,e  

^a California Institute of Technology   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d INSTITUTE OF PHYSICS   (Taiwan)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; GRAPHENE;

CARBON; CHEMICAL ANALYSIS; COPPER; CRYSTALLINITY; ELECTRICAL METHOD; HIGH TEMPERATURE; MOBILITY; PLASMA;

ANALYTIC METHOD; ARTICLE; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; MATHEMATICAL ANALYSIS; ROOM TEMPERATURE; STRESS STRAIN RELATIONSHIP; SURFACE PROPERTY; SYNTHESIS; TEMPERATURE;

EID: 84925059166     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms7620     Document Type: Article

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