Synthesis of monolayer graphene having a negligible amount of wrinkles by stress relaxation

Nano Letters

Volumn 13, Issue 6, 2013, Pages 2496-2499

  Mun, Jeong Hun ^a   Cho, Byung Jin ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

CVD graphene; graphene mobility; graphene transistor; graphene wrinkle; metal surface roughness

Indexed keywords

AFTER HIGH TEMPERATURE; CHEMICAL VAPOR DEPOSITIONS (CVD); CVD GRAPHENE; GRAPHENE TRANSISTORS; HIGH CARRIER MOBILITY; HIGH-TEMPERATURE ANNEALING; METAL SURFACES; REDUCED GRAPHENE OXIDES (RGO);

CATALYSTS; CHEMICAL VAPOR DEPOSITION; COMPOSITE FILMS; GRAIN GROWTH; METALLIC FILMS; METALS; MONOLAYERS; SURFACE ROUGHNESS;

GRAPHENE;

EID: 84879086112     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4005578     Document Type: Article

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