Physics of grain boundaries in polycrystalline photovoltaic semiconductors

Journal of Applied Physics

Volumn 117, Issue 11, 2015, Pages

  Yan, Yanfa ^a   Yin, Wan Jian ^a   Wu, Yelong ^a   Shi, Tingting ^a   Paudel, Naba R ^a   Li, Chen ^b   Poplawsky, Jonathan ^b   Wang, Zhiwei ^a,c   Moseley, John ^c   Guthrey, Harvey ^c   Moutinho, Helio ^c   Pennycook, Stephen J ^d   Al Jassim, Mowafak M ^c  

^a UNIVERSITY OF TOLEDO   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^d University of Tennessee   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM TELLURIDE; CHEMICAL MODIFICATION; CHLORINE; DENSITY FUNCTIONAL THEORY; EFFICIENCY; GRAIN BOUNDARIES; II-VI SEMICONDUCTORS; SELENIUM COMPOUNDS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR POWER GENERATION; THIN FILM SOLAR CELLS; THIN FILMS;

CHEMICALLY MODIFIED; CURRENT COLLECTION; DISLOCATION CORE; NONRADIATIVE RECOMBINATION CENTERS; PHOTOGENERATED CARRIERS; PHOTOVOLTAIC PROPERTY; POLYCRYSTALLINE SOLAR CELLS; SOLAR CELL DEVICES;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 84924941661     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4913833     Document Type: Conference Paper

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