Effect of copassivation of Cl and Cu on CdTe grain boundaries

Physical Review Letters

Volumn 101, Issue 15, 2008, Pages

  Zhang, Lixin ^a   Da Silva, Juarez L F ^a   Li, Jingbo ^b   Yan, Yanfa ^a   Gessert, T A ^a   Wei, Su Huai ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL GROWTH; DEFECT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; TELLURIUM COMPOUNDS;

HIGH DEFECT DENSITIES; POLYCRYSTALLINE; TWO TYPES;

COPPER;

EID: 54249125333     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.101.155501     Document Type: Article

References (20)

1. A.P. Sutton and R.W. Balluffi, Interfaces in Crystalline Materials (Oxford Science Publications, New York, 1995);
2. F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990). SSTEET 0268-1242 10.1088/0268-1242/5/2/001
3. M.A. Contreras, Prog. Photovoltaics 13, 209 (2005). PPHOED 1062-7995 10.1002/pip.626
4. X. Wu, Proceedings of the 17th European Photovoltaic Solar Energy Conference (Munich, Germany, 2001), Vol. II, p. 995.
5. Y. Yan, Phys. Rev. Lett. 99, 235504 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.99.235504
6. C. Persson and A. Zunger, Phys. Rev. Lett. 91, 266401 (2003). PRLTAO 0031-9007 10.1103/PhysRevLett.91.266401
7. S. Siebentritt, Phys. Rev. Lett. 97, 146601 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.97.146601
8. Y. Yan, M.M. Al-Jassim, and K.M. Jones, J. Appl. Phys. 96, 320 (2004). JAPIAU 0021-8979 10.1063/1.1758313
9. B.E. McCandless, I. Youm, and R.W. Birkmire, Prog. Photovoltaics PPHOED 1062-7995 7, 21 (1999). 10.1002/(SICI)1099-159X(199901/02)7:1<21::AID- PIP244>3.0.CO;2-D
10. T.A. Gessert, J. Vac. Sci. Technol. A JVTAD6 0734-2101 14, 806 (1996). 10.1116/1.580394
11. S.-H. Wei and S.B. Zhang, Phys. Rev. B PRBMDO 0163-1829 66, 155211 (2002). 10.1103/PhysRevB.66.155211
12. H.C. Chou, A. Rohatgi, N.M. Jokerst, E.W. Thomas, and S. Kamra, J. Electron. Mater. 25, 1093 (1996). JECMA5 0361-5235 10.1007/BF02659909
13. C. Narayanswamy, T.A. Gessert, and S.E. Asher, AIP Conf. Proc. No. 462 (AIP, New York, 1998), p. 248.
14. Y. Yan, M.M. Al-Jassim, and K.M. Jones, J. Appl. Phys. 94, 2976 (2003). JAPIAU 0021-8979 10.1063/1.1598641
15. G. Kresse and J. Hafner, Phys. Rev. B PRBMDO 0163-1829 47, R558 (1993); 10.1103/PhysRevB.47.558
16. G. Kresse J. Hafner Phys. Rev. B PRBMDO 0163-1829 49, 14251 (1994). 10.1103/PhysRevB.49.14251
17. G. Kresse and D. Joubert, Phys. Rev. B PRBMDO 0163-1829 59, 1758 (1999). 10.1103/PhysRevB.59.1758
18. S.-H. Wei, Comput. Mater. Sci. CMMSEM 0927-0256 30, 337 (2004). 10.1016/j.commatsci.2004.02.024
19. J.L.F. Da Silva, S.-H. Wei, J. Zhou, and X.Z. Wu, Appl. Phys. Lett. 91, 091902 (2007). APPLAB 0003-6951 10.1063/1.2775835
20. L. Zhang, E.G. Wang, Q.K. Xue, S.B. Zhang, and Z. Zhang, Phys. Rev. Lett. 97, 126103 (2006). PRLTAO 0031-9007 10.1103/PhysRevLett.97.126103