Room temperature dry processing of patterned CVD graphene devices

Carbon

Volumn 86, Issue , 2015, Pages 256-263

  Mahmood, Ather ^a   Yang, Cheol Soo ^b   Dayen, Jean François ^a   Park, Serin ^b   Kamalakar, M Venkata ^c   Metten, Dominik ^a   Berciaud, Stéphane ^a   Lee, Jeong O ^b   Doudin, Bernard ^a  

^a UNIVERSITÉ DE STRASBOURG   (France)

^b Korea Research Institute of Chemical Technology   (South Korea)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; GRAPHITE ELECTRODES; MILLING (MACHINING); SHOTCRETING; SUBSTRATES;

CHEMICAL FUNCTIONALIZATION; EXCESSIVE HEATING; GRAPHENE ELECTRODES; INTRINSIC PROPERTY; MAGNETO-TRANSPORT MEASUREMENT; ORGANIC ELECTRONICS; SENSITIVE MATERIALS; SINGLE LAYER FILMS;

GRAPHENE DEVICES;

EID: 84924615953     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2015.01.040     Document Type: Article

References (53)

1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, and S.V. Dubonos et al. Electric field effect in atomically thin carbon films Science 306 2004 666 669
2. Y. Zhang, Y.-W. Tan, H.L. Stormer, and P. Kim Experimental observation of the Quantum Hall effect and Berry's phase in graphene Nature 438 2005 201 204
3. Y.-M. Lin, C. Dimitrakopoulos, K.A. Jenkins, D.B. Farmer, H.-Y. Chiu, and A. Grill et al. 100-GHz transistors from wafer-scale epitaxial graphene Science 327 2010 662
4. S.Z. Butler, S.M. Hollen, L. Cao, Y. Cui, J.A. Gupta, and H.R. Gutiérrez et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene ACS Nano 7 2013 2898 2926
5. X. Li, W. Cai, L. Colombo, and R.S. Ruoff Evolution of graphene growth on Ni and Cu by carbon isotope labeling Nano Lett 9 2009 4268 4272
6. X. Li, W. Cai, J. An, S. Kim, J. Nah, and D. Yang et al. Large-area synthesis of high-quality and uniform graphene films on copper foils Science 324 2009 1312 1314
7. J. Cho, L. Gao, J. Tian, H. Cao, W. Wu, and Q. Yu et al. Atomic-scale investigation of graphene grown on Cu foil and the effects of thermal annealing ACS Nano 5 2011 3607 3613
8. 2 Appl Phys Lett 99 2011 122108
9. 2-supported graphene devices Nano Lett 11 2011 767 771
10. X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, and D. Chen et al. Transfer of large-area graphene films for high-performance transparent conductive electrodes Nano Lett 9 2009 4359 4363
11. K.S. Kim, Y. Zhao, H. Jang, S.Y. Lee, J.M. Kim, and K.S. Kim et al. Large-scale pattern growth of graphene films for stretchable transparent electrodes Nature 457 2009 706 710
12. Y. Lee, S. Bae, H. Jang, S. Jang, S.-E. Zhu, and S.H. Sim et al. Wafer-scale synthesis and transfer of graphene films Nano Lett 10 2010 490 493
13. M.P. Levendorf, C.S. Ruiz-Vargas, S. Garg, and J. Park Transfer-free batch fabrication of single layer graphene transistors Nano Lett 9 2009 4479 4483
14. 2 Nano Lett 7 2007 1643 1648
15. J.W. Suk, W.H. Lee, J. Lee, H. Chou, R.D. Piner, and Y. Hao et al. Enhancement of the electrical properties of graphene grown by chemical vapor deposition via controlling the effects of polymer residue Nano Lett 13 2013 1462 1467
16. 2 and h-BN substrates Nano Lett 13 2013 3199 3204
17. P. Du, M. Jaouen, A. Bocheux, C. Bourgogne, Z. Han, and V. Bouchiat et al. Surface-confined self-assembled janus tectons: a versatile platform towards the noncovalent functionalization of graphene Angew Chem Int Ed 2014 n/a-n/a
18. W.H. Lee, J. Park, Y. Kim, K.S. Kim, B.H. Hong, and K. Cho Control of graphene field-effect transistors by interfacial hydrophobic self-assembled monolayers Adv Mater 23 2011 3460 3464
19. S. Bae, H. Kim, Y. Lee, X. Xu, J.-S. Park, and Y. Zheng et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes Nat Nanotechnol 5 2010 574 578
20. J. Kang, S. Hwang, J.H. Kim, M.H. Kim, J. Ryu, and S.J. Seo et al. Efficient transfer of large-area graphene films onto rigid substrates by hot pressing ACS Nano 6 2012 5360 5365
21. W.J. Choi, Y.J. Chung, S. Park, C.-S. Yang, Y.K. Lee, and K.-S. An et al. A simple method for cleaning graphene surfaces with an electrostatic force Adv Mater 26 2014 637 644
22. J.-F. Dayen, A. Mahmood, D.S. Golubev, I. Roch-Jeune, P. Salles, and E. Dujardin Side-gated transport in focused-ion-beam-fabricated multilayered graphene nanoribbons Small 4 2008 716 720
23. D. Teweldebrhan, and A.A. Balandin Modification of graphene properties due to electron-beam irradiation Appl Phys Lett 94 2009 013101
24. M.C. Lemme, D.C. Bell, J.R. Williams, L.A. Stern, B.W.H. Baugher, and P. Jarillo-Herrero et al. Etching of graphene devices with a helium ion beam ACS Nano 3 2009 2674 2676
25. A.N. Abbas, G. Liu, B. Liu, L. Zhang, H. Liu, and D. Ohlberg et al. Patterning, characterization, and chemical sensing applications of graphene nanoribbon arrays down to 5 nm using helium ion beam lithography ACS Nano 8 2014 1538 1546
26. S. Hang, Z. Moktadir, and H. Mizuta Raman study of damage extent in graphene nanostructures carved by high energy helium ion beam Carbon 72 2014 233 241
27. Y.X. Zhou, A.T. Johnson, J. Hone, and W.F. Smith Simple fabrication of molecular circuits by shadow mask evaporation Nano Lett 3 2003 1371 1374
28. V.D. Boogaart, A.F. Marc, M. Lishchynska, J. Brugger, V. Bourenkov, and L. Doeswijk et al. Predicting mask distortion, clogging and pattern transfer for stencil lithography Microelectron Eng 81 2007 42 53
29. O. Vazquez-Mena, L.G. Villanueva, V. Savu, K. Sidler, P. Langlet, and J. Brugger Analysis of the blurring in stencil lithography Nanotechnology 20 2009 415303
30. N. Staley, H. Wang, C. Puls, J. Forster, T.N. Jackson, and K. McCarthy et al. Lithography-free fabrication of graphene devices Appl Phys Lett 90 2007 143518
31. W. Bao, G. Liu, Z. Zhao, H. Zhang, D. Yan, and A. Deshpande et al. Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices Nano Res 3 2010 98 102
32. H. Cao, Q. Yu, L.A. Jauregui, J. Tian, W. Wu, and Z. Liu et al. Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization Appl Phys Lett 96 2010 122106
33. A.M.R. Baker, J.A. Alexander-Webber, T. Altebaeumer, T.J.B.M. Janssen, A. Tzalenchuk, and S. Lara-Avila et al. Weak localization scattering lengths in epitaxial, and CVD graphene Phys Rev B 86 2012 235441
34. T. Shen, W. Wu, Q. Yu, C.A. Richter, R. Elmquist, and D. Newell et al. Quantum Hall effect on centimeter scale chemical vapor deposited graphene films Appl Phys Lett 99 2011 232110
35. B. Fallahazad, Y. Hao, K. Lee, S. Kim, R.S. Ruoff, and E. Tutuc Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition Phys Rev B 85 2012 201408
36. E.R. Mucciolo, and C.H. Lewenkopf Disorder and electronic transport in graphene J Phys: Condens Matter 22 2010 273201
37. .
38. 2 substrate Nano Lett 10 2010 4944 4951
39. M. Lafkioti, B. Krauss, T. Lohmann, U. Zschieschang, H. Klauk, and K.V. Klitzing et al. Graphene on a hydrophobic substrate: doping reduction and hysteresis suppression under ambient conditions Nano Lett 10 2010 1149 1153
40. A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, and F. Mauri et al. Raman spectrum of graphene and graphene layers Phys Rev Lett 97 2006 187401
41. S. Berciaud, X. Li, H. Htoon, L.E. Brus, S.K. Doorn, and T.F. Heinz Intrinsic line shape of the Raman 2D-mode in freestanding graphene monolayers Nano Lett 13 2013 3517 3523
42. L.G. Cançado, A. Jorio, E.H.M. Ferreira, F. Stavale, C.A. Achete, and R.B. Capaz et al. Quantifying defects in graphene via Raman spectroscopy at different excitation energies Nano Lett 11 2011 3190 3196
43. M.M. Lucchese, F. Stavale, E.H.M. Ferreira, C. Vilani, M.V.O. Moutinho, and R.B. Capaz et al. Quantifying ion-induced defects and Raman relaxation length in graphene Carbon 48 2010 1592 1597
44. Y. Nam, J. Sun, N. Lindvall, S.J. Yang, D. Kireev, and C.R. Park et al. Quantum Hall effect in graphene decorated with disordered multilayer patches Appl Phys Lett 103 2013 233110
45. X.C. Yang, H.M. Wang, T.R. Wu, F.Q. Huang, J. Chen, and X.X. Kang et al. Magnetotransport of polycrystalline graphene: Shubnikov-de Haas oscillation and weak localization study Appl Phys Lett 102 2013 233503
46. K.I. Bolotin, K.J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, and J. Hone et al. Ultrahigh electron mobility in suspended graphene Solid State Commun 146 2008 351 355
47. A.F. Morpurgo, and F. Guinea Intervalley scattering, long-range disorder, and effective time-reversal symmetry breaking in graphene Phys Rev Lett 97 2006 196804
48. G. Bergmann Weak localization in thin films a time-of-flight experiment with conduction electrons Phys Rep 107 1984 1 58
49. F.V. Tikhonenko, D.W. Horsell, R.V. Gorbachev, and A.K. Savchenko Weak localization in graphene flakes Phys Rev Lett 100 2008 056802
50. X. Wu, X. Li, Z. Song, C. Berger, and W.A. De Heer Weak antilocalization in epitaxial graphene: evidence for chiral electrons Phys Rev Lett 98 2007 136801
51. R.V. Gorbachev, F.V. Tikhonenko, A.S. Mayorov, D.W. Horsell, and A.K. Savchenko Weak localization in bilayer graphene Phys Rev Lett 98 2007 176805
52. Mahmood A. manuscript in preparation n.d.
53. E. McCann, K. Kechedzhi, V.I. Fal'ko, H. Suzuura, T. Ando, and B.L. Altshuler Weak-localization magnetoresistance and valley symmetry in graphene Phys Rev Lett 97 2006 146805