Current and noise properties of InAs nanowire transistors with asymmetric contacts induced by gate overlap

IEEE Transactions on Electron Devices

Volumn 61, Issue 3, 2014, Pages 884-889

  Delker, Collin J ^a   Zi, Yunlong ^a   Yang, Chen ^a   Janes, David B ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Low frequency noise; metal semiconductor contact; nanowire MOSFET; Schottky barrier

Indexed keywords

NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; TRANSISTORS;

ASYMMETRIC GATES; CONTACT GEOMETRY; LOW-FREQUENCY NOISE; METAL-SEMICONDUCTOR CONTACTS; NANOWIRE MOSFET; NANOWIRE TRANSISTORS; SCHOTTKY BARRIERS; SOURCE AND DRAINS;

DRAIN CURRENT;

EID: 84896755033     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2296298     Document Type: Article

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