High-mobility β-Ga2O3(201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

Applied Physics Express

Volumn 8, Issue 3, 2015, Pages

  Oishi, Toshiyuki ^a   Koga, Yuta ^a   Harada, Kazuya ^a   Kasu, Makoto ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; DIODES; ELECTRON MOBILITY; FILM GROWTH; GALLIUM COMPOUNDS; HALL MOBILITY; SINGLE CRYSTALS;

EDGE-DEFINED FILM-FED GROWTH METHODS; FORWARD VOLTAGE; HALL ELECTRON MOBILITY; HIGH ELECTRON MOBILITY; IDEALITY FACTORS; IONIZED IMPURITY SCATTERING; OPTICAL PHONON SCATTERING; SCATTERING MECHANISMS;

SCHOTTKY BARRIER DIODES;

EID: 84923862716     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.8.031101     Document Type: Article

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