Diversity of electronic transitions and photoluminescence properties of p -type cuprous oxide films: A temperature-dependent spectral transmittance study

Journal of Applied Physics

Volumn 117, Issue 4, 2015, Pages

  Yu, W L ^a   Lin, Y Z ^a   Zhu, X W ^a   Hu, Z G ^b   Han, M J ^c   Cai, S S ^a   Chen, L L ^a   Shao, H H ^a  

^a WENZHOU MEDICAL UNIVERSITY   (China)

^b EAST CHINA NORMAL UNIVERSITY   (China)

^c SHANGHAI DIANJI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; COPPER; PHOTOLUMINESCENCE; QUARTZ; SEMICONDUCTOR QUANTUM WELLS; SOL-GEL PROCESS; SOL-GELS; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURES; ELECTRONIC BAND STRUCTURE; ELECTRONIC TRANSITION ENERGIES; HIGH-ENERGY TRANSITIONS; HIGH-FREQUENCY DIELECTRICS; PHOTOLUMINESCENCE PROPERTIES; SPECTRAL TRANSMITTANCE; TEMPERATURE DEPENDENT;

OXIDE FILMS;

EID: 84923683367     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4906405     Document Type: Article

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